2sc5161 transistors high voltage switching transistor (400v, 2a) 2sc5161 ! ! ! ! features 1) low v ce(sat) . v ce(sat) =0.15v (typ.) (i c /i b =1a/0.2a) 2) high breakdown voltage. v ceo =400v 3) fast switching. t f 1.0 s (i c =0.8a) ! ! ! ! structure three-layer, diffused planar type npn silicon transistor ! ! ! ! external dimensions (units : mm) (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.5 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ! ! ! ! absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? single pulse pw = 10ms parameter v cbo v ceo v ebo i c p c tj tstg 400 v v v a(dc) w w(tc = 25 c) c c 400 7 2 i cp a(pulse) 4 ? 1 10 150 ? 55~ + 150 symbol limits unit
2sc5161 transistors ! ! ! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance turn-on time storage time fall time emitter-base breakdown voltage base-emitter saturation voltage transition frequency parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 400 400 7 ? ? 25 ? ? ? ? ? ? ? ? ? ? 10 30 ? ? ? 10 10 50 1 ? ? 1 ? vi c = 50 a i c = 1ma i e = 50 a v cb = 400v v eb = 7v v ce = 5v, i c = 0.1a i c /i b = 1a/0.2a v ce = 10v,i e =? 0.1a,f = 5mhz v cb = 10v, i e = 0a, f = 1mhz v v a a ? v mhz pf t on ?? 1i c = 0.8a, r l = 250 ? i b1 =? i b2 = 0.08a v cc 200v refer to measurement circuit diagram s t stg ?? 2.5 s t f ?? 1 s typ. max. unit conditions v be(sat) ?? 1.5 i c /i b = 1a/0.2a v ? 1 measured using pulse current ! ! ! ! packaging specifications and h fe package name code taping basic ordering unit (pieces) tl 2500 b h fe 2sc5161 type h fe values are classified as follows : item b h fe 25~50 ! ! ! ! electrical characteristic curves fig.1 grounded emitter propagation characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 collector current : i c (a) base to emitter voltage : v be (v) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 v ce = 5v ? 25 c ta = 100 c 25 c fig.2 grounded emitter output characteristics collector to emitter voltage : v ce (v) 0 0.4 0.8 1.2 1.6 2.0 0246810 collector current : i c (a) i b = 10ma 20ma 40ma 60ma 80ma 120ma 180ma tc = 25 c fig.3 dc current gain vs. collector c urrent ( ) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 dc current gain : h fe collector current : i c (a) 1000 500 200 100 50 20 10 5 2 1 5v v ce = 10v ta = 25 c
2sc5161 transistors fig.4 dc current gain vs. collector current ( ? ) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 dc current gain : h fe collector current : i c (a) 1000 500 200 100 50 20 10 5 2 1 ta = 25 c ta = 100 c 25 c ? 25 c fig.5 collector-emitter saturation voltage vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 collector saturation voltage : v ce(sat ) (v) collector current : i c (a) 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 5 i c /i b = 10 ta = 25 c fig.6 collector-emitter saturation voltage vs. collector current base-emitter saturation voltage vs. collector current 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 collector saturation voltage : v ce(sat) (v) base saturation voltage : v be(sat) (v) collector current : i c (a) 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 ? 25 c 25 c 100 c i c /i b = 5 ta =? 25 c 100 c 25 c fig.7 gain bandwidth product vs. emitter current ? 0.001 ? 0.002 ? 0.005 ? 0.01 ? 0.02 ? 0.05 ? 0.1 ? 0.2 ? 0.5 ? 1 transition frequency : f t (mhz) emitter current : i e (a) 1 2 5 10 20 50 100 200 500 1000 ta = 25 c v ce = 10v fig.8 collector output capacitance vs. collector-base voltage 0.5 0.2 0.1 1 25 10 20 50 100 collector output capacitance : c ob (pf) collector to base voltage : v cb (v) 1000 500 200 100 50 20 10 5 2 1 ta = 25 c f = 1mhz i e = 0a fig.9 switching time vs. collector current 0.01 0.02 0.05 0.2 0.5 0.1 1 2 5 10 turn on time : t on ( s) storage time : t stg ( s) fall time : t f ( s) collector current : i c (a) 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 t f t on t stg i c = 10i b1 =? 10i b2 pulse ! ! ! ! switching characteristic measurement circuit base current wave form collector current wave form v in p w i c 90% 10% t on t stg t f i c i b1 i b2 t.u.t. i b2 i b1 v cc 200v r l = 250 ? p w 50 s duty cycle 1%
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